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| TRANSISTOR MODULE Hi- SQD300BA60 UL;E76102 M SQD300BA60 is a Darlington power transistor module with a ULTRA HIGH hFE, high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode (trr 200ns). The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction, IC 300A, VCEX 600V Low saturation voltage for higher efficiency. ULITRA HIGH DC current gain hFE. hFE 750 Isolated mounting base VEBO 10V for faster switching speed. Applications Motor Control VVVF , AC/DC Servo, UPS, Switching Power Supply, Ultrasonic Application Unit A Maximum Ratings Symbol VCBO VCEX VEBO IC IC IB PT Tj Tstg VISO Item Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Reverse Collector Current Base Current Total power dissipation Junction Temperature Storage Temperature Isolation Voltage Mounting Torque Mass M6 Terminal M6 Terminal M4 A.C.1minute Recommended Value 2.5 3.9 25 40 Recommended Value 2.5 3.9 25 40 Recommended Value 1.0 1.4 10 14 Typical Value TC 25 40 =pw 1ms VBE 2V Conditions Ratings SQD300BA60 600 600 10 300 600 300 18 1380 150 40 125 2500 4.7 48 4.7 48 1.5 15 460 Tj 25 Unit V V V A A A W V Nm ( f B) g Tj 25 Electrical Characteristics Symbol ICBO IEBO VCEO SUS VCEX SUS hFE VCE VBE sat sat Item Collector Cut-off Current Emitter Cut-off Current Collector Emitter Sustaning Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage On Time Switching Time Storage Time Fall Time Collector-Emitter Reverse Voltage Reverse Recovery time Thermal Impedance (junction to case) VCB VCBO VEB VEBO Ic 1A Ic 60A IB2 Conditions Ratings Min. Typ. Max. 4.0 1200 450 Unit mA mA V 10A 600 750 2.5 3.0 2.0 8.0 2.0 1.8 5V 200 0.09 0.3 Ic 300A VCE 2.5V Ic 300A IB 400mA Ic 300A IB 400mA Vcc 300V Ic 300A 6A IB1 0.6A IB2 Ic 300A V V s V ns /W ton ts tf VECO trr Rth j-c Vcc 300V, Ic 300A, di/dt 300A/ s, VBE Transistor part Diode part 55 SQD300BA60 56 |
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